Fine processing method

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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438942, 438703, H01L 21302

Patent

active

058997504

ABSTRACT:
In a fine processing method for forming a silicon substrate, first, an oxynitride layer is formed on the silicon substrate. Thereafter, a silicon nitride layer is formed on the oxynitride layer and patterned into a predetermined shape to cause it to function as an etching mask. The silicon substrate is etched through the etching mask. In this case, because of the oxynitride layer formed between the silicon substrate and the silicon nitride layer, an interface between the silicon substrate and the silicon nitride layer is not easily eroded in the etching process. As a result, processing accuracy of the substrate is improved.

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patent: 5591494 (1997-01-01), Sato et al.
"Effects of Oxygen On the Physical Properties of Silicon Nitride Layers"; Heinz; Abstract Only; Int. Wiss Kolloq.-Tech. Hochsch. Ilmenau (1978'), 23 (6), 93-5.

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