Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1997-03-12
1999-05-04
Breneman, Bruce
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438942, 438703, H01L 21302
Patent
active
058997504
ABSTRACT:
In a fine processing method for forming a silicon substrate, first, an oxynitride layer is formed on the silicon substrate. Thereafter, a silicon nitride layer is formed on the oxynitride layer and patterned into a predetermined shape to cause it to function as an etching mask. The silicon substrate is etched through the etching mask. In this case, because of the oxynitride layer formed between the silicon substrate and the silicon nitride layer, an interface between the silicon substrate and the silicon nitride layer is not easily eroded in the etching process. As a result, processing accuracy of the substrate is improved.
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Abe Yoshitsugu
Inoue Kazuyuki
Matsumoto Koji
Tanaka Hiroshi
Breneman Bruce
Denso Corporation
Goudreau George
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