Fine patterning method for semiconductor device

Details Fine patterning method for semiconductor device Fine patterning method for semiconductor device

2006-03-31

2009-11-03

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S445000, C438S736000, C257SE21023

Reexamination Certificate

active

07611994

ABSTRACT:
An insulation film is formed on a semiconductor substrate. A stopper film, which has a large etching selectivity relative to the insulation film and has a first film thickness, is formed on the insulation film. A first mask material, which has a second film thickness that is less than the first film thickness, is formed on the stopper film. A first mask is formed by patterning the first mask material. An opening portion is formed by etching the stopper film using the first mask. The opening portion is filled with a second mask material. A second mask of the second mask material is formed by removing the stopper film. The insulation film is etched using the second mask.

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Notice of Reasons for Rejection mailed Jul. 8, 2008, from the Japanese Patent Office in counterpart Japanese Application No. 2005-104874.

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