Fine pattern lithography with positive use of interference

Details Fine pattern lithography with positive use of interference Fine pattern lithography with positive use of interference

1995-02-10

1997-06-10

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430396, G03F 900

Patent

active

056374240

ABSTRACT:
A mask for forming a desired pattern on the image plane is divided into a number of cell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.

REFERENCES:
patent: 5053628 (1991-10-01), Yamamoto et al.
patent: 5316896 (1994-05-01), Fukuda et al.
patent: 5418092 (1995-05-01), Okamoto

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