Fine pattern forming method

Details Fine pattern forming method Fine pattern forming method

2006-03-08

2009-10-20

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S394000, C438S009000

Reexamination Certificate

active

07604908

ABSTRACT:
A fine pattern forming method includes the first step of depositing a plasma reaction products on a sidewall of a patterned mask layer to increase a pattern width thereof, the second step of etching a first etching target layer by using as a mask the mask layer, the pattern width of which has been increased, the third step of filling with a mask material a space formed in the etched first etching target layer, the fourth step of etching the etched first etching target layer leaving the mask material filling the space, and the fifth step of etching a second etching target layer by using a remaining mask material as a mask.

REFERENCES:
patent: 5661061 (1997-08-01), Usuami et al.
patent: 2003/0224617 (2003-12-01), Baek et al.
patent: 2006/0046200 (2006-03-01), Abatchev et al.

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