Fine pattern forming apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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156643, 118723, 118729, 20429831, 20429802, H01L 2100

Patent

active

052289400

ABSTRACT:
A fine pattern forming apparatus includes a stage and an opposed electrode at least one of which is made of a magnetic material. A magnetic field is applied to this stage or opposed electrode to provide a predetermined gap between the stage and the opposed electrode for a fine pattern formation. In consequence, optimum etching conditions (including etching uniformity, etch rate and etching direction) can be assured without generating dust. As a result, damage caused by the plasma can be reduced, and the etch rate can be increased.

REFERENCES:
patent: 4351805 (1982-09-01), Reisman
patent: 4563240 (1986-01-01), Shibata et al.
Yoneda et al., "Anisotropic Etching of Poly-Si by RIE", Dry Process Symposium, 1981, pp. 47-53.

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