Fine line printing by trimming the sidewalls of...

Details Fine line printing by trimming the sidewalls of... Fine line printing by trimming the sidewalls of...

2005-03-08

2005-03-08

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C430S322000

Reexamination Certificate

active

06864185

ABSTRACT:
A method of forming a feature pattern in a photosensitive layer includes forming the photosensitive layer on a substrate, providing a first mask having a first opaque area thereon, and performing a first exposure process with a first dose to form a first unexposed image in the photosensitive layer. The method further includes performing a second exposure process with a second dose to expose sidewalls of the first unexposed image so that the sidewalls of the first unexposed image receive at least a portion of the second dose thus forming a second unexposed image in the photosensitive layer, and developing the photosensitive layer with a developing process to form the feature pattern and to create features having smaller widths than those which would result in developing the photosensitive layer of the first unexposed image.

REFERENCES:
patent: 5415835 (1995-05-01), Brueck et al.
patent: 5759744 (1998-06-01), Brueck et al.
patent: 6620564 (2003-09-01), Hung et al.

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