Fine gold alloy wire for bonding of a semiconductor device

Details Fine gold alloy wire for bonding of a semiconductor device Fine gold alloy wire for bonding of a semiconductor device

1989-12-04

1991-12-10

Zimmerman, John J.

Alloys or metallic compositions

Gold base

428606, C22C 502

Patent

active

050716190

ABSTRACT:
A fine gold alloy wire of high tensile strength for bonding semiconductor elements is disclosed. The wire consists essentially of 0.0003 to 0.010 wt % of at least one rare earth element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y, the balance being Au and incidental impurities. The wire does not present a deformed loop and has greater bond strength if it contains 0.0003 to 0.010 wt % of at least one rare earth element of the Cerium Group selected from the group consisting of La, Ce, Pr, Nd and Sm and 0.0001 to 0.0060 wt % of at least one element selected from among Ge, Be and Ca.

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