Fin device with capacitor integrated under gate electrode

Details Fin device with capacitor integrated under gate electrode Fin device with capacitor integrated under gate electrode

2007-09-25

2007-09-25

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S270000, C257S328000, C257S331000, C257S365000, C257SE21442, C257SE29275

Reexamination Certificate

active

10904357

ABSTRACT:
A fin-type field effect transistor (FinFET) has a fin having a center channel portion, end portions comprising source and drain regions, and channel extensions extending from sidewalls of the channel portion of the fin. The structure also includes a gate insulator covering the channel portion and the channel extensions, and a gate conductor on the gate insulator. The channel extensions increase capacitance of the channel portion of the fin.

REFERENCES:
patent: 5391506 (1995-02-01), Tada et al.
patent: 6720619 (2004-04-01), Chen et al.
patent: 2003/0042531 (2003-03-01), Lee et al.
patent: 2003/0151077 (2003-08-01), Mathew et al.
patent: 2004/0197975 (2004-10-01), Krivokapic et al.

Affiliated with

Also associated with

Rating

Fin device with capacitor integrated under gate electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fin device with capacitor integrated under gate electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fin device with capacitor integrated under gate electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3774786