Filter window, lithographic projection apparatus, filter...

Photocopying – Projection printing and copying cameras – Illumination systems or details

Reexamination Certificate

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C355S077000

Reexamination Certificate

active

07456932

ABSTRACT:
A filter window for EUV lithography includes a pellicle, and a wire structure for supporting the pellicle. The pellicle includes a first layer that includes at least one of AlN, Ru, Ir, Au, SiN, Rh. The pellicle has a very low EUV absorption in combination with a minimal oxidation rate. The thickness of the pellicle may be between 30 nm and 100 nm. It can be easily checked that absorption of EUV radiation of such a thin pellicle is equal to known filter windows, i.e. about 50% at a wavelength of 13.5 nm wavelength, but the oxidation of the pellicle according to the invention is much smaller. The filter window can for example be used to separate a Projection Optics box and a wafer compartment of the apparatus or to shield a reticle from particle contamination.

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Powell et al., “Filter Windows for EUV Lithography,”Proceedings of SPIE,vol. 4343, 2001, pp. 585-589, XP-002287402.
Japanese Official Action issued for Japanese Patent Application No. 2004-222768, dated Jul. 6, 2007.

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