Filter circuit for a MOS-type integrated device, and an integrat

Details Filter circuit for a MOS-type integrated device, and an integrat Filter circuit for a MOS-type integrated device, and an integrat

1988-05-09

1989-02-28

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307303, 307297, 307296R, 307568, 307543, 307443, H03K 17687, H03K 333, H03K 301, H03K 1716

Patent

active

048088609

ABSTRACT:
A circuit for a MOS-type integrated device includes two cross-coupled drain-gate transistors. In order to supply filtered voltages V'DD and V'SS which are equivalent to VDD and VSS, an N-channel first transistor has its source connected to VSS and its drain supplies the voltage V'SS, while a P-channel second transistor has its source connected to VDD, and its drain supplies the voltage V'DD. A third transistor may also be provided in order to accelerate the initial switching of the circuit should its state not be appropriate when voltage is applied.

REFERENCES:
patent: 4295176 (1981-10-01), Wittwer
patent: 4596936 (1986-06-01), Aoyama

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