Films for prevention of crystal growth on fused silica...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000, C430S322000

Reexamination Certificate

active

07604906

ABSTRACT:
Photolithography masks, systems and methods and more particularly to photolithography masks systems and methods for making and using silicon dioxide mask substrates are disclosed. The mask generally includes a silicon-dioxide mask substrate having a front surface, a patterned layer disposed on the front surface, and a coating of a fluoride of an element of group IIA that covers the patterned layer. The coating reduces undesired crystal growth on the silicon dioxide mask substrate. Such masks can be incorporated into photolithography systems and used in photolithography methods wherein a layer of photoresist is formed on a substrate and to radiation that impinges on the mask. Such a mask can be fabricated, e.g., by forming a patterned layer on a front surface of a silicon dioxide mask substrate and covering the patterned layer with a coating of a fluoride of an element of group IIA.

REFERENCES:
patent: 5484671 (1996-01-01), Okamoto
patent: 6364946 (2002-04-01), Staeblein et al.
patent: 6517977 (2003-02-01), Resnick et al.
patent: 6653024 (2003-11-01), Shiraishi et al.
patent: 6673520 (2004-01-01), Han et al.
patent: 6686101 (2004-02-01), McCullough
patent: 6740159 (2004-05-01), Kandler et al.
patent: 6759171 (2004-07-01), Kalk
patent: 6797439 (2004-09-01), Alpay
patent: 6869734 (2005-03-01), Lyons et al.
patent: 6872497 (2005-03-01), Levinson et al.
patent: 6890688 (2005-05-01), Mancini et al.
patent: 7271950 (2007-09-01), Gordon et al.
patent: 2001/0049062 (2001-12-01), Kamon
patent: 2003/0165749 (2003-09-01), Fritze et al.
Uta-Barbara Goers, “Fluence-Dependent Transmission (FDT) of Calcium Fluoride” SPIE Conference 2002.
U.S. Appl. No. 11/075,993 to William Volk et al., entitled “Use of Calcium Fluoride Substrate for Lithography Masks” filed Mar. 9, 2005.
Non-Final Office Action dated Aug. 7, 2008 for U.S. Appl. No. 11/075,993, 8 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Films for prevention of crystal growth on fused silica... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Films for prevention of crystal growth on fused silica..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Films for prevention of crystal growth on fused silica... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4138784

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.