Films doped with carbon for use in integrated circuit technology

Details Films doped with carbon for use in integrated circuit technology Films doped with carbon for use in integrated circuit technology

1999-07-16

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438216, 438784, 438DIG970, 257437, H01L 213115, H01L 310232, H01L 21302

Patent

active

061627372

ABSTRACT:
The present invention pertains to films comprising silicon and oxygen that are doped with carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.

REFERENCES:
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5441901 (1995-08-01), Candelaria
patent: 5472488 (1995-12-01), Allman
patent: 5716891 (1998-02-01), Korhma
patent: 5933760 (1999-08-01), Iyor et al.
patent: 5976991 (1999-11-01), Laxman et al.
patent: 6071807 (2000-06-01), Watanabe
Research Disclosure 408124, "Combined Oxide and Nitride Spacer Deposition By Using Two Liquid Sources At One Low Temperature In Single Furnace," Apr. 1998.

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