Film thickness measuring method, relative dielectric...

Details Film thickness measuring method, relative dielectric... Film thickness measuring method, relative dielectric...

2005-07-05

2005-07-05

Barlow, John (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system

Dimensional determination

C324S445000

Reexamination Certificate

active

06915232

ABSTRACT:
A non-contact method of measuring the thickness of an insulator film on a semiconductor substrate includes: (i) charging the insulator film surface in a non-contact manner; (ii) obtaining a first flat band voltage by conducting, prior to the charging processing step, a C-V measurement on the semiconductor substrate; obtaining a second flat band voltage by conducting, after the charging processing step, a C-V measurement on the semiconductor substrate; and calculating, based on a difference between the first and second flat band voltages, the charge amount given to the insulator film surface by the charging processing step; (iii) then measuring the insulator film surface potential and (iv) calculating the insulator film thickness based on the charge amount measured at the charge amount measuring step and on the surface potential measured at the surface potential measuring step.

REFERENCES:
patent: 5475319 (1995-12-01), Hirae et al.
patent: 5485091 (1996-01-01), Verkuil
patent: 6278267 (2001-08-01), Okada et al.
patent: 6-349920 (1994-12-01), None

Affiliated with

Also associated with

Rating

Film thickness measuring method, relative dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film thickness measuring method, relative dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film thickness measuring method, relative dielectric... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3424380