Film quality evaluation method, apparatus therefor, and...

Optics: measuring and testing – By dispersed light spectroscopy – With raman type light scattering

Reexamination Certificate

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C356S429000

Reexamination Certificate

active

07907276

ABSTRACT:
An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.

REFERENCES:
patent: 2005/0181240 (2005-08-01), Ishiyama et al.
patent: 2001-110864 (2001-04-01), None
patent: 2002-026348 (2002-01-01), None
patent: 2002-176009 (2002-06-01), None
patent: 2003-234288 (2003-08-01), None
patent: 2006-112939 (2006-04-01), None
patent: 2007-040855 (2007-02-01), None
patent: WO 2006/045621 (2006-05-01), None
Office Action issued Sep. 16, 2008 from corresponding Japanese Patent Application No. 2007-039596.

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