Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2001-02-26
2003-07-29
Jackson, Jerome (Department: 2814)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C427S508000, C427S557000, C427S558000, C427S595000
Reexamination Certificate
active
06599780
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of Invention
The present invention relates to a method of producing a film from a liquid phase, and to a film obtained by such a method. More specifically, the present invention relates to a method of producing a film such as an electrically conductive metal film for use as an interconnection or a terminal, and to a film such as an electrically conductive metal colloid film having excellent conductivity obtained by that method.
2. Description of Related Art
Conventionally, various functional films (thin films such as an electrically conductive film and an insulating film) used in electronic devices such as a semiconductor device are formed by a process in a vacuum such as vacuum evaporation, chemical vapor deposition, and sputtering.
SUMMARY OF THE INVENTION
Because the above-described process is performed in a vacuum, a large-sized and complicated apparatus is generally needed. Thus, there is a need for a process for more easily producing a high-performance thin-film.
An object of the present invention is to at least provide a method of producing a film (thin film) having a good characteristic in a simple manner using a simple apparatus.
The present invention provides a method of producing a film, which may include the steps of forming a colloid layer on a substrate, and irradiating the surface of the colloid layer with an energy beam such that higher energy beam absorption occurs in the colloid layer than in the substrate.
The present invention is based at least on an idea of the present inventor that if a metal colloid is subjected to a particular process, an organic component contained in the metal colloid is removed, and metal-to-metal contacts are formed, thereby achieving the above object.
REFERENCES:
patent: 4396704 (1983-08-01), Taylor
patent: 4474831 (1984-10-01), Downey
patent: 4500628 (1985-02-01), Taylor
patent: 4517276 (1985-05-01), Lewis
patent: 4711822 (1987-12-01), Choyke et al.
patent: 4869760 (1989-09-01), Matsunami
patent: 4966442 (1990-10-01), Ono et al.
patent: 5053318 (1991-10-01), Gulla et al.
patent: 5213917 (1993-05-01), Gulla et al.
patent: 5246821 (1993-09-01), Abe et al.
patent: 5384382 (1995-01-01), Mori et al.
patent: 5534609 (1996-07-01), Lewis et al.
patent: 5932309 (1999-08-01), Smith et al.
patent: 5955192 (1999-09-01), Fukushima et al.
patent: 6140449 (2000-10-01), Mori et al.
patent: 6180188 (2001-01-01), Belleville et al.
patent: 6194507 (2001-02-01), Ali
patent: 6344272 (2002-02-01), Oldenburg et al.
patent: 339876 (1998-12-01), None
patent: 10-325956 (1998-12-01), None
patent: 10325957 (1998-12-01), None
Jackson Jerome
Rao Shrinivas H.
Seiko Epson Corporation
LandOfFree
Film production method and film produced thereby does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Film production method and film produced thereby, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film production method and film produced thereby will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3077369