Film forming system and film forming method

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

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Details

C118S719000, C118S722000, C414S937000, C414S938000, C414S940000, C432S241000

Reexamination Certificate

active

07935185

ABSTRACT:
A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.

REFERENCES:
patent: 5378283 (1995-01-01), Ushikawa
patent: 5536320 (1996-07-01), Ushikawa et al.
patent: 6038788 (2000-03-01), Chang
patent: 2003/0049372 (2003-03-01), Cook et al.
patent: 04-269824 (1992-09-01), None
patent: 6-132224 (1994-05-01), None
patent: 7-161656 (1995-06-01), None
patent: 8-31909 (1996-02-01), None
patent: 10-050806 (1998-02-01), None
patent: 2003-282452 (2003-10-01), None
Japanese Office Action mailed May 19, 2009 for a corresponding application JP2004-272996 (w/English translation).
Japanese Office Action mailed Jun. 25, 2007 for a corresponding application JP2004-272996 (w/English translation).

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