Film forming method

Details Film forming method Film forming method

1982-07-21

1984-04-24

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

044446357

ABSTRACT:
A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted magnetically on the target plate by at least three magnetically coupled magnetic poles to deposit the materials into a film with a uniform thickness and a desired composition on the substrate.

REFERENCES:
patent: 3956093 (1976-05-01), McLeod
patent: 4025410 (1977-05-01), Stewart
patent: 4132613 (1979-01-01), Penfold et al.
patent: 4155825 (1979-05-01), Fournier
patent: 4265729 (1981-05-01), Morrison
patent: 4309266 (1982-01-01), Nakamura et al.
patent: 4356073 (1982-10-01), McKelvey
Abe, et al., Thin Solid Films, 96(1982), pp. 225-233.
Hoffman, Thin Solid Films, 96(1982), pp. 217-224.

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