Film forming apparatus

Details Film forming apparatus Film forming apparatus

1994-12-29

1996-04-30

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429812, 20429815, 118723VE, 118723E, C23C 1434, C23C 1600

Patent

active

055121551

ABSTRACT:
A film forming apparatus such as a sputtering apparatus, a vacuum evaporation apparatus, or a CVD apparatus, having a film forming substrate and a film forming source both arranged within a film forming chamber, for forming a thin film on the film forming substrate. This film forming apparatus has within the film forming chamber a apparatus part other than the film forming substrate on which a component of the film forming source, e.g., a target, is deposited. At least on the surface of the apparatus part on which the component of the film forming source is deposited is composed of a material whose thermal expansion coefficient is equal or close to that of the thin film to be formed. Even if the component of the film forming source forms a deposition on the apparatus part other than the film forming substrate, the separation of such a deposition due to a thermal stress can be controlled because the thermal expansion coefficients of the deposition and apparatus part are equal or close to each other. Accordingly, it is possible to prevent the infiltration of the separated deposition into the formed film as fine particles.

REFERENCES:
patent: 4392931 (1983-07-01), Maniv et al.
patent: 4416759 (1983-11-01), Harra et al.
patent: 4468313 (1984-08-01), Okumura et al.
patent: 4485000 (1984-11-01), Kawaguchi et al.
patent: 4508612 (1985-04-01), Blackwell et al.
patent: 4814056 (1989-03-01), Welty
Patent Abstracts of Japan, vol. 12, No. 312, 24 Aug. 1988; & JP-A-63 83 257, 13, Apr. 1988.
Patent Abstracts of Japan, vol. 13, No. 39, 27 Jan. 1989; & JP-A-63 238, Apr. 10, 1988.
Vossen et al., "Thin Film Processes", Academic Press, N.Y., p. 41, 1978.

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