Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1990-10-03
1991-12-24
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429816, 118723, C23C 1434, C23C 1600
Patent
active
050749854
ABSTRACT:
A film forming apparatus comprises of a microwave generating device and processing chamber. The processing chamber has a substrate therein, holds the pressure of atmosphere gas therein at a predetermined value, and generates plasma while introducing the microwave generated by the microwave generating device for forming a film on the substrate. The microwave is introduced in the processing chamber through a dielectric member disposed in the processing chamber. Further a shielding member is disposed in the processing chamber so as to be opposite to the dielectric member for preventing the attachment of film forming material to the dielectric member.
REFERENCES:
patent: 4721553 (1988-01-01), Saito et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4857809 (1989-08-01), Torri et al.
patent: 4952273 (1990-08-01), Popov
patent: 4970435 (1990-11-01), Tanaka et al.
Shimizu Tamotsu
Tamura Hitoshi
Hitachi , Ltd.
Nguyen Nam X.
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