Film formation through co-deposition with high and low energy be

Details Film formation through co-deposition with high and low energy be Film formation through co-deposition with high and low energy be

1987-01-29

1988-07-26

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 47, B05D 306

Patent

active

047599480

ABSTRACT:
Manufacturing of film through co-deposition with a high-energy beam and a low-energy beam. The low-energy beam is produced by electron beam heating or resistance heating. The high-energy beam is produced by a bucket-type ion source in which a magnetic field of multi-cusp-like configuration are employed and is composed of pulse trains in which each pulse has a duration not longer than 10 sec. and preferably in a range of 1 to 100 msec. The high-energy beam serves to clean the surface of the workpiece and form a mixed layer at interface between the workpiece and the deposited film. A film having a high quality and a strong adhesion can be obtained.

REFERENCES:
Ota, pp. 1102-1110, J. Appl. Phys., vol. 51, No. 2, Feb. 1980, Silicon Molecular Beam Epitaxy with Simultaneous Ion Implant Doping.

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