Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Reexamination Certificate
2004-03-19
2008-12-16
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
C257S154000, C257S758000
Reexamination Certificate
active
07465966
ABSTRACT:
A new film formation method that makes it possible to form a film with a little concentration of contaminants from a material and to form a film on a low heat-resistant member is proposed. Further, a method for forming a film that can keep semiconductor properties is proposed. In the film formation method of the present invention, a first film that is to be a target is formed by employing plasma CVD, and the first film is sputtered, thereby forming the second film on a surface of the substrate to be processed in one chamber. By employing the film formation method of the present invention for a protective film of a semiconductor element, deterioration of a semiconductor device can be controlled.
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Asami Taketomi
Fukuchi Kunihiko
Ichijo Mitsuhiro
Toriumi Satoshi
Costellia Jeffrey L.
Nixon & Peabody LLP
Pham Long
Semiconductor Energy Laboratory Co,. Ltd.
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