Film formation method and apparatus for semiconductor process

Details Film formation method and apparatus for semiconductor process Film formation method and apparatus for semiconductor process

2006-06-19

2009-12-29

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C438S706000, C438S714000, C438S723000

Reexamination Certificate

active

07637268

ABSTRACT:
In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.

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