Film formation apparatus and method for using the same

Details Film formation apparatus and method for using the same Film formation apparatus and method for using the same

2008-05-02

2011-12-20

Kornakov, Michael (Department: 1714)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S019000, C134S021000, C134S022100, C438S905000

Reexamination Certificate

active

08080109

ABSTRACT:
A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

REFERENCES:
patent: 7494943 (2009-02-01), Noro et al.
patent: 7938080 (2011-05-01), Noro et al.
patent: 2004/0077511 (2004-04-01), Barnes et al.
patent: 2006/0213539 (2006-09-01), Hasebe et al.
patent: 3-293726 (1991-12-01), None
patent: 2007-142354 (2007-06-01), None
patent: 10-2005-0115067 (2005-12-01), None
patent: 10-2007-0043640 (2007-04-01), None
Korean Office Action issued on Jun. 17, 2011 for Application No. 10-2008-0043927with partial English translation.

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