Film for copper diffusion barrier

Details Film for copper diffusion barrier Film for copper diffusion barrier

2005-11-22

2005-11-22

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C438S627000, C438S643000, C438S653000, C438S687000

Reexamination Certificate

active

06967405

ABSTRACT:
The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

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Yu, et al., “Low-K B-Doped SIC Copper Diffusion Barrier Films”, Novellus Systems, Inc., U.S. Appl. No. 10/915,117, filed Aug. 9, 2004, pp. 1-22.

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