Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1995-05-30
1996-09-17
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 118726, 118728, 20429815, 20429825, 20429826, C23C 1400
Patent
active
055564720
ABSTRACT:
A MBE film deposition apparatus comprises a vacuum chamber provided with a partition wall for dividing the vacuum chamber into a first sub-chamber and a second sub-chamber, which are independently provided with a main evacuating apparatus and a auxiliary evacuating apparatus, respectively. The partition wall including an opening for introducing a vacuum impedance for molecular flows between the tint sub-chamber and the second sub-chamber so that a pressure difference can be created between the first sub-chamber and the second sub-chamber when the opening is open. A gate valve is provided on the partition wall for hermetically closing the opening of the partition wall so as to shut off the molecular flows between the first sub-chamber and the second sub-chamber. At least one evaporation source is provided in the first sub-chamber, and a substrate holder is located within the second sub-chamber. A gas supplying apparatus is provided in the second sub-chamber so as to supplying a predetermined gas to the second sub-chamber.
REFERENCES:
patent: 4434189 (1984-02-01), Zapiatynsky
patent: 4473455 (1984-09-01), Dean
patent: 4492852 (1985-01-01), Finegan
patent: 4599069 (1986-07-01), Murakami
patent: 4693207 (1987-09-01), Hayakawa et al.
patent: 4950642 (1990-08-01), Okamoto
patent: 5004721 (1991-04-01), DeLozanne
patent: 5016563 (1991-05-01), Murakami
patent: 5033407 (1991-07-01), Mizuno
Zheng, Appl. Phys. Lett. 55 (10), Sep. 4, 1989, pp. 1044-1046.
Dye, Appl. Phys. Lett. 57 (11), Sep. 10, 1990, pp. 1149-1151.
Chan, J. Vac. Sci. Technol. A, vol. 9, No. 5, Sep./Oct. 1991, pp. 2648-2652.
"Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition", Tsukamoto et al., Japanese Journal of Applied Physics, vol. 30, No. 5A, May 1991, pp. L-830-L-833.
"Superconductivity of Bi.sub.2 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.y (n=2, 3, 4, and 5) Thin Films Prepared In Situ by Molecular-Beam Epitaxy Technique", Nakayama et al., J. Applied Physics, vol. 70, No. 8, Oct. 15, 1991, pp. 4371-4377.
Iiyama Michitoma
Nakamura Takao
Bueker Richard
Feeney William L.
Sumitomo Electric Industries Ltd
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