Film comprising silicon dioxide as the main component and method

Details Film comprising silicon dioxide as the main component and method Film comprising silicon dioxide as the main component and method

1995-04-27

1998-06-30

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419215, 20419223, C23C 1434

Patent

active

057728623

ABSTRACT:
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.

REFERENCES:
patent: 3763026 (1973-10-01), Cordes
patent: 4063211 (1977-12-01), Yasujima et al.
patent: 4849081 (1989-07-01), Ross
patent: 4978437 (1990-12-01), Wirz

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