Film circuit metal system for use with bumped IC packages

Details Film circuit metal system for use with bumped IC packages Film circuit metal system for use with bumped IC packages

1994-04-01

1995-09-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257762, 257763, 257764, 257766, 257770, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

054499550

ABSTRACT:
A multilayer composite interconnection for use in circuits including thin film elements and electrical interconnections includes a copper barrier layer interposed between a nickel layer and a gold layer of the interconnection. The copper layer is in a thickness sufficient to bar or at least to restrict diffusion of nickel through the gold layer under processing and operating conditions. The interconnection multilayer composite interconnection includes in an ascending order, titanium, palladium or palladium-titanium alloy, copper, nickel, copper barrier and gold layers.

REFERENCES:
patent: 3451030 (1969-06-01), Garfinkel
patent: 3528893 (1970-09-01), Christie et al.
patent: 3622385 (1971-11-01), Stork
patent: 3781596 (1973-12-01), Galli et al.

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