Film bulk acoustic-wave resonator and method for...

Wave transmission lines and networks – Coupling networks – Electromechanical filter

Reexamination Certificate

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C310S322000, C310S324000, C257S416000, C438S048000, C438S053000, C029S025350, C333S189000

Reexamination Certificate

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11626270

ABSTRACT:
A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

REFERENCES:
patent: 6204737 (2001-03-01), Ella
patent: 6662419 (2003-12-01), Wang et al.
patent: 7019604 (2006-03-01), Gotoh et al.
patent: 7053456 (2006-05-01), Matsuo
patent: 7129806 (2006-10-01), Sato
patent: 7214564 (2007-05-01), Sung et al.
patent: 2000-69594 (2000-03-01), None

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