Film bulk acoustic resonator (FBAR) process using...

Details Film bulk acoustic resonator (FBAR) process using... Film bulk acoustic resonator (FBAR) process using...

2007-11-27

2007-11-27

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S830000, C029S831000, C029S832000, C029S835000, C029S844000, C029S847000, C333S187000

Reexamination Certificate

active

11154854

ABSTRACT:
A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer. An apparatus comprising a resonator attached to a substrate and suspended over a cavity in the substrate, the resonator comprising a bottom electrode layer and a piezoelectric layer on the bottom electrode layer, both the bottom electrode layer and the piezoelectric layer having been deposited in a vacuum, and a top electrode layer on the piezoelectric layer, wherein one or more edges of the bottom electrode layer and the piezoelectric layer include features that prevent electrical contact between the bottom electrode layer and the top electrode layer.

REFERENCES:
patent: 5696423 (1997-12-01), Dydyk et al.
patent: 6242843 (2001-06-01), Pohjonen et al.
patent: 6307447 (2001-10-01), Barber et al.
patent: 6384697 (2002-05-01), Ruby
patent: 6437484 (2002-08-01), Nishimura et al.

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