Film bulk acoustic resonator (FBAR) device and method for...

Wave transmission lines and networks – Coupling networks – Electromechanical filter

Reexamination Certificate

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C333S187000

Reexamination Certificate

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06933809

ABSTRACT:
An FBAR device includes a substrate structure provided with an upper surface, a seed layer formed on the upper surface of the substrate structure and made of one selected from gold (Au) and titanium (Ti), and one or more acoustic resonant portions. Each of the acoustic resonant portions includes a lower electrode film formed on the seed layer and made of molybdenum (Mo), a piezoelectric layer formed on the lower electrode film and made of aluminum nitride (AlN), and an upper electrode film formed on the piezoelectric layer.

REFERENCES:
patent: 2004/0021191 (2004-02-01), Bradley
patent: 2004/0021400 (2004-02-01), Bradley et al.
patent: 2004/0142497 (2004-07-01), Bradley
patent: 2004/0172798 (2004-09-01), Ruby et al.
patent: 2004/0227590 (2004-11-01), Larson, III et al.
Patent Abstracts of Japan, Publication No. 2000-196157 dated Jul. 14, 2000.

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