Wave transmission lines and networks – Coupling networks – Electromechanical filter
Reexamination Certificate
2005-08-23
2005-08-23
Le, Don (Department: 2819)
Wave transmission lines and networks
Coupling networks
Electromechanical filter
C333S187000
Reexamination Certificate
active
06933809
ABSTRACT:
An FBAR device includes a substrate structure provided with an upper surface, a seed layer formed on the upper surface of the substrate structure and made of one selected from gold (Au) and titanium (Ti), and one or more acoustic resonant portions. Each of the acoustic resonant portions includes a lower electrode film formed on the seed layer and made of molybdenum (Mo), a piezoelectric layer formed on the lower electrode film and made of aluminum nitride (AlN), and an upper electrode film formed on the piezoelectric layer.
REFERENCES:
patent: 2004/0021191 (2004-02-01), Bradley
patent: 2004/0021400 (2004-02-01), Bradley et al.
patent: 2004/0142497 (2004-07-01), Bradley
patent: 2004/0172798 (2004-09-01), Ruby et al.
patent: 2004/0227590 (2004-11-01), Larson, III et al.
Patent Abstracts of Japan, Publication No. 2000-196157 dated Jul. 14, 2000.
Kyoung Je Hong
Sunwoo Kook Hyun
Le Don
Lowe Hauptman & Berner LLP
Samsung Electro-Mechanics Co. Ltd.
LandOfFree
Film bulk acoustic resonator (FBAR) device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Film bulk acoustic resonator (FBAR) device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film bulk acoustic resonator (FBAR) device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3502116