Film bulk acoustic resonator and method of forming the same

Details Film bulk acoustic resonator and method of forming the same Film bulk acoustic resonator and method of forming the same

2006-01-31

2006-01-31

Schuberg, Darren (Department: 2834)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

C310S312000, C310S346000, C310S349000, C310S367000, C310S341000, C310S321000

Reexamination Certificate

active

06992420

ABSTRACT:
A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.

REFERENCES:
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patent: 6051907 (2000-04-01), Ylilammi et al.
patent: 6617751 (2003-09-01), Sunwoo et al.
patent: 6788170 (2004-09-01), Kaitila et al.
patent: 6828713 (2004-12-01), Bradley et al.
patent: 2001-29007 (2001-04-01), None
patent: 2001-97701 (2001-11-01), None

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