Film bulk acoustic resonator and filter

Details Film bulk acoustic resonator and filter Film bulk acoustic resonator and filter

2007-12-14

2010-10-19

Summons, Barbara (Department: 2817)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S189000, C310S312000, C310S324000

Reexamination Certificate

active

07816998

ABSTRACT:
A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.

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patent: 2008/0051039 (2008-02-01), Iwasaki et al.
patent: 2008/0143215 (2008-06-01), Hara et al.
patent: 60-189307 (1985-09-01), None
patent: 2002-223144 (2002-08-01), None
Electronic Letters, 9thJul. 1981, vol. 17, No. 14, pp. 507-509, “ZnO/SiO2—Diaphragm Composite Resonator On A Silicon Wafer”, Nakamura et al.

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