Film acoustic wave device, manufacturing method and circuit...

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

Reexamination Certificate

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Details

C029S025350, C310S320000, C310S366000

Reexamination Certificate

active

06963155

ABSTRACT:
A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.

REFERENCES:
patent: 2799789 (1957-07-01), Wolfskill
patent: 3401275 (1968-09-01), Curran et al.
patent: 3676724 (1972-07-01), Berlincourt et al.
patent: 4320365 (1982-03-01), Black et al.
patent: 4427515 (1984-01-01), Yuhara et al.
patent: 4435441 (1984-03-01), Mariani et al.
patent: 4468582 (1984-08-01), Fujiwara et al.
patent: 4642508 (1987-02-01), Suzuki et al.
patent: 5059847 (1991-10-01), Tanaka et al.
patent: 5065065 (1991-11-01), Hikita et al.
patent: 5075641 (1991-12-01), Weber et al.
patent: 5160870 (1992-11-01), Carson et al.
patent: 5185589 (1993-02-01), Krishnaswamy et al.
patent: 5194836 (1993-03-01), Vale et al.
patent: 5692279 (1997-12-01), Mang et al.
patent: A 10-755085 (1997-01-01), None
patent: 61 269410 (1986-11-01), None
patent: A 62-78904 (1987-04-01), None
patent: A 62-122405 (1987-06-01), None
patent: 63 18708 (1988-01-01), None
patent: A 1-103012 (1989-04-01), None
patent: A 1-231411 (1989-09-01), None
patent: 2 189011 (1990-07-01), None
patent: 5-259804 (1993-10-01), None
patent: A 6-204776 (1994-07-01), None
patent: 406252691 (1994-09-01), None
patent: A 8-274573 (1996-10-01), None
Copy of Office Action from Canadian Intellectual Property Office, May 28, 2001.
“Effects of Aluminum Thickness on Temperature Characteristics of Surface Acoustic Wave Devices on the LST-Cut of Quartz,” M. Murota et al., The Journal of Institute of Electronics, Information and Communication Engineers, A vol. J74-A, No. 9, pp. 1359-1365, Sep. 1991.
“Analysis of Trapped-Energy Resonators and Monolithic Filters by the Equivalent Distributed-Constant Circuits,” K Nakamura et al., The Journal of Institute of Electronics, Information and Communication Engineers, '76/11 vol. J59-A, No. 11, pp. 985-992.
“Energy-Trapping for Backward-Wave-Mode Thickness-Vibrations by Controlling Piezoelectric Reaction,” H. Shimizu et al., The Journal of Institute of Electronics, Information and Communication Engineers, '79/1 vol. J62-A No. 1, pp. 8-15.
“Equivalent-Network Analyses of Engergy-Trapping of Backward-Wave Thickness Vibrations,” K. Yamada et al., The Journal of Institute of Electronics, Information and Communication Engineers, '80/6, vol. J63-A, No. 6, pp. 327-334.
“Optimization of Quartz SAW Resonator Structure with Groove Gratings,” Takehiko Uno et al., IEEE Transactions on Sonics and Ultrasonics, vol. SU-29, No. 6, Nov. 1982, pp. 299-310.

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