Filling of high aspect ratio trench isolation

Details Filling of high aspect ratio trench isolation Filling of high aspect ratio trench isolation

1997-08-07

2000-10-24

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438437, 438430, H01L 2176

Patent

active

061366641

ABSTRACT:
A method of forming a trench isolation on a semiconductor substrate comprising the steps of forming a trench in the substrate, partially filling the trench with a first layer of polysilicon, oxidizing the first layer of polysilicon, partially filling the trench with at least a second layer of polysilicon, and oxidizing the second layer of polysilicon. By utilizing the method of the present invention, formation of voids and defects in a trench isolation having a high aspect ratio can be prevented.

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