Filling contact hole with selectively deposited EPI and poly sil

Details Filling contact hole with selectively deposited EPI and poly sil Filling contact hole with selectively deposited EPI and poly sil

1991-07-02

1992-06-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437195, 437 01, 148DIG164, 148DIG26, H01L 2120, H01L 2144

Patent

active

051242761

ABSTRACT:
A semiconductor device includes a semiconductor layer, an insulating layer on the semiconductor layer, including a discontinuity therein, a monocrystalline silicon layer on a portion of semiconductor layer defined by the discontinuity, a non-monocrystalline silicon layer on the monocrystalline silicon layer, and a wiring layer on the non-monocrystalline silicon layer.

REFERENCES:
patent: 4592792 (1986-06-01), Corboy, Jr. et al.
patent: 4749441 (1988-06-01), Christenson et al.
patent: 4786615 (1988-11-01), Liaw et al.
patent: 4963506 (1990-10-01), Liaw et al.
patent: 4965219 (1990-10-01), Cerofolini
patent: 5010034 (1991-04-01), Manoliu
patent: 5045494 (1991-09-01), Choi et al.
F. Mieno, et al "Selective Doped Polysilicon Growth Effect of Carbon on the Selective Doped Silicon Film Growth" J. Electrochem. Soc. Solid State Science and Technology vol. 134, No. 11, pp. 2862-2867 (1987).

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