Filled trench isolation structure

Details Filled trench isolation structure Filled trench isolation structure

2004-06-11

2009-06-23

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S506000

Reexamination Certificate

active

07550816

ABSTRACT:
A method for depositing a dielectric in a trench on a semiconductor substrate is provided. The dielectric is deposited by using an HDP-CVD system and performing a deposition of first and second layers of dielectric material. A first inert gas is utilized during the deposition of the first layer, and a second inert gas is utilized during the deposition of the second layer. Generally, a purge step is performed between the deposition of the first and second layers. The resulting dielectric layers are substantially free of voids and have low particle counts. Structures utilizing the filled trenches are also disclosed.

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