Batteries: thermoelectric and photoelectric – Thermoelectric – Having particular thermoelectric composition
Reexamination Certificate
2004-08-04
2008-05-13
Nguyen, Nam (Department: 1753)
Batteries: thermoelectric and photoelectric
Thermoelectric
Having particular thermoelectric composition
C136S203000, C136S205000
Reexamination Certificate
active
07371960
ABSTRACT:
This invention provides novel thermoelectric compounds comprising:a) atomic percent Ytterbiumb) between 50 and 74.999 atomic percent Aluminumc) between 0.001 and 25 atomic percent Manganese and a process for their preparation.
REFERENCES:
patent: 5064476 (1991-11-01), Recine
patent: 5171372 (1992-12-01), Recine
patent: 5441576 (1995-08-01), Bierschenk
patent: 5576512 (1996-11-01), Doke
patent: 5610366 (1997-03-01), Fleurial
patent: 5747728 (1998-05-01), Fleurial
patent: 5769943 (1998-06-01), Fleurial
patent: 5929351 (1999-07-01), Kusakabe
patent: 5965841 (1999-10-01), Imanishi
patent: 6188011 (2001-02-01), Nolas
patent: 6207886 (2001-03-01), Kusakabe et al.
patent: 6207888 (2001-03-01), Nolas
patent: 6225550 (2001-05-01), Hornbostel et al.
patent: 6235981 (2001-05-01), Miyoshi
patent: 6342668 (2002-01-01), Fleurial
patent: 6369314 (2002-04-01), Nolas
patent: 2003/0168641 (2003-09-01), Funahashi et al.
patent: 2005/0123431 (2005-06-01), He
patent: 2005/0229983 (2005-10-01), He
patent: 57179023 (1982-04-01), None
patent: 57-179023 (1982-11-01), None
patent: 4-62981 (1992-02-01), None
patent: 08057290 (1996-05-01), None
patent: 2001102642 (2001-04-01), None
patent: 2002026400 (2002-01-01), None
patent: WO 2005/056847 (2005-06-01), None
Rowe et al, “Thermoelectric properties of hot-pressed YbAl3 compound over temperature range 150-800 K,” 18th International Conference on Thermoelectrics, IEEE (1997) pp. 528-531.
He et al, “Origin of low thermal conductivity in α-Mn: Enhancing the ZT of YbAl3 and CoSb3 through Mn addition,” 2005 International Conference on Thermoelectrics, IEEE, (2005), pp. 437-442.
Brian C. Sales, Novel Thermoelectric Materials, Current Opinion on Solid State and Materials Science, 1997, pp. 284-289, vol. 2.
Y.K. Kuo et. al., Thermoelectric Properties of Binary CD-YB Quasicrystals and CD6YB, Journal of Applied Physics, 2004, pp. 1900-1905, vol. 95.
Akai et. al., Effects of Defects and Impurities on Electronic Properties in Skutterudites, 17thInternational Conference on Thermoelectrics, 1998, pp. 105-108.
B.C. Sales et. al., Filled Skutterudite Antimonides: A New Class of Thermoelectric Materials, Science, 1996, pp. 1325-1328, vol. 272.
Lidong Chen, Recent Advances in Filled Skutterudite Systems, 21stInternational Conference on Thermoelectronics, 2002, pp. 42-47.
Ctirad Uher, In Search of Efficient N-Type Skutterudite Thermoelectrics, 21stInternational Conference on Thermoelectronics, 2002, pp. 35-41.
Jeffrey S. Dyck et. al., Thermoelectric Properties of the N-Type Filled Skutterudite Ba 0.3 Co4 Sb12 Doped With Ni, Journal of Applied Physics, 2002, pp. 3698-3705, vol. 91.
Koji Akai et. al., Effects of Defects and Impurities on Electronic Properties in CoSB3, 16th International Conference on Thermoelectrics, 1997, pp. 334-337.
He Tao
Krajewski James J.
Subramanian Munirpallam Appadorai
E.I. du Pont de Nemours and Company
Nguyen Nam
Trinh Thanh-Truc
LandOfFree
Figure of merit in Ytterbium-Aluminum-Manganese... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Figure of merit in Ytterbium-Aluminum-Manganese..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Figure of merit in Ytterbium-Aluminum-Manganese... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3984746