Field terminating structure

Details Field terminating structure Field terminating structure

1981-11-13

1984-08-28

Edlow, Martin H.

357 23, 357 52, H01L 2940, H01L 2978, H01L 2934

Patent

active

044686862

ABSTRACT:
An improved field terminating structure for a semiconductor device provides a well defined voltage gradient in the vicinity of a p-n junction to reduce the electric field near the junction and increase the junction breakdown voltage. The structure includes one or more MOS-type field effect transistors operably connected to one of the regions of the junction. A portion of the potential difference applied across the junction corresponding to the threshold voltage of each transistor is distributed across the surface of the device near the junction.

REFERENCES:
patent: 3405329 (1968-10-01), Loro et al.
patent: 3582727 (1971-06-01), Granger et al.
patent: 3753055 (1973-08-01), Yamashita et al.
patent: 3764406 (1974-10-01), Bosselaar
patent: 3845331 (1974-10-01), Luscher
Conti et al., "Surface Breakdown in Silicon Planar Diodes Equipped with Field Plate", Solid State Electronics, vol. 15, (1972), pp. 93-105.

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