Field shields for Schottky barrier devices

Details Field shields for Schottky barrier devices Field shields for Schottky barrier devices

1984-07-18

1986-04-01

Buczinski, S. C.

357 53, 357 20, 357 52, H01L 2948, H01L 2906

Patent

active

H00000400

ABSTRACT:
The present invention relates to an improved Schottky barrier device wherein the leakage current present in the reverse bias mode attributed to the presence of an electric field at the Schottky barrier (18) is significantly reduced by the inclusion of one or more field shields (22), P.sup.+ -type diffusions located under the metal anode (16) of the Schottky barrier device at the Schottky barrier (18). The P.sup.+ -type field shields, which are disposed in a pattern on the surface of the Schottky barrier, reduce the surface electric field present, thereby significantly reducing the leakage current related thereto.

REFERENCES:
patent: 3541403 (1970-11-01), Lepselter et al.
patent: 3616380 (1971-10-01), Lepselter et al.
patent: 4119446 (1978-10-01), Mastroianni
patent: 4134123 (1979-01-01), Shannon
"Silicon Schottky Barrier Diode. . .", Bell System Technical Journal, vol. 47, No. 2, Feb. 1968 , pp. 195-208, Lepselter et al.
"Reverse Current-Voltage Characteristics. . .", Solid-State Electronics, vol. 13, pp. 1011-1023, J. M. Andrews et al.
"Optimum Doping Profile. . .", IEEE Transactions on Electron Devices, vol. Ed-26, No. 3, Mar. 1979, pp. 243-244, C. Hu.
"Schottky-Barrier Diodes. . .", Electronic Components and Applications, vol. 4, No. 4, Aug. 1982, pp. 201-205, Hafemeister.
"High-Voltage Power Schottky. . .", IBM Technical Disclosure Bulletin, vol. 25, No. 5, Oct. 1982, pp. 2331-2333, Jambotkar.
"Electric-Field-Shielding Layers. . .", Electronics Letters, vol. 19, No. 15, Jul. 21, 1983, pp. 568-570, S. Nakashima et al.

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