Field programmable gate array having reproducible metal-to-metal

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

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257 50, 257530, H01L 2702

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active

057172307

ABSTRACT:
A field programmable gate array has a programmable interconnect structure comprising metal signal conductors and metal-to-metal PECVD amorphous silicon antifuses. The metal-to-metal PECVD amorphous silicon antifuses have an unprogrammed resistance of at least 550 megaohms and a programmed resistance of under 200 ohms.

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