Field-plated transistor including feedback resistor

Amplifiers – With semiconductor amplifying device – Including plural stages cascaded

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C330S277000

Reexamination Certificate

active

08008977

ABSTRACT:
Embodiments include but are not limited to apparatuses and systems including a unit cell having a source electrode, a gate electrode to receive an input radio frequency (RF) signal, and a drain electrode to output an amplified RF signal. A field plate may be coupled with the source electrode, and a feedback resistor may be coupled between the field plate and the source electrode.

REFERENCES:
patent: 6867078 (2005-03-01), Green et al.
patent: 7126426 (2006-10-01), Mishra et al.
patent: 2005/0062069 (2005-03-01), Saito et al.
patent: 2005/0116253 (2005-06-01), Yamane et al.
patent: 2005/0253168 (2005-11-01), Wu et al.
patent: 2006/0006415 (2006-01-01), Wu et al.
patent: 2006/0043416 (2006-03-01), Li et al.
patent: 2006/0118809 (2006-06-01), Parikh et al.
patent: 2006/0138454 (2006-06-01), Saito et al.
patent: 2006/0202272 (2006-09-01), Wu et al.
patent: 2007/0018210 (2007-01-01), Sheppard
patent: 2007/0114569 (2007-05-01), Wu et al.
patent: 2007/0235775 (2007-10-01), Wu
patent: 2007/0272957 (2007-11-01), Johnson
patent: 2008/0116492 (2008-05-01), Wu et al.
patent: 2009/0032820 (2009-02-01), Chen
patent: 2009/0256210 (2009-10-01), Matsushita et al.
patent: 2009-032724 (2009-02-01), None
patent: WO2008006907 (2008-06-01), None
Ando, et al.; Novel AIGaN/GaN Dual-Field Plate FET with High Gain, Increased Linearity and Stability; article; 4 pages; 2005 IEEE; Aug. 2005.
Chiu, et al.; Microwave performance of AiGaAs/InGaAs pseudomorphic HEMTs with tuneable field-plate voltage; Semicond. Sci. Teachnol. 21, No. 10; pp. 1432-1436; 2006.
Ishikura, K., et al.; A 28V over 300 W GaAs Heterojunction FET with Dual Field-Modulating-Plates for W-CDMA Base Stations; article; 4 pages; 2005 IEEE; Jan. 2005.
Verzellesi, et al.; DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs; performance and reliability issues; Microelectronics Reliability 45, pp. 1585-1592; 2005.
Wakejima, et al.; A GaAs-Based Field-Modulating Plate HFET with Improved WCDMA Peak-Output-Power Characteristics; IEEE Transactions on Electrode Devices, vol. 50, No. 9, pp. 1983-1987; 2003.
Wu, Y.F.; et al., High-gain Microwave GaN HEMTs with Source-terminated Field-plates; article; pp. 33.7.1-33.7.2; 2004 IEEE; Jan. 2004.
Xing, et al.; High Breakdown Voltage A1GaN-GaN HEMTs Achieved by Multiple Field Plates; article; pp. 161-163; IEEE Electron Device Letters, vol. 25, No. 4; Apr. 2004.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Field-plated transistor including feedback resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-plated transistor including feedback resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-plated transistor including feedback resistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2765422

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.