Field oxide with curvilinear boundaries and method of producing

Details Field oxide with curvilinear boundaries and method of producing Field oxide with curvilinear boundaries and method of producing

1994-05-26

1995-11-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 70, 148DIG106, H01L 2176

Patent

active

054666325

ABSTRACT:
A method of forming field oxides with curvilinear boundaries between active regions on a substrate in an integrated circuit (IC) so that the stresses induced in the active regions due to the formation of field oxide can be reduced. Problems like junction leakage are reduced due to the rounded boundaries of the field oxides.

REFERENCES:
Wolf, "Silicon Processing For The VLSI Era" vol. 2, Process Integration; Lattice Press, pp. 20-22, 1990.

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