Field oxide termination and gate oxide formation

Details Field oxide termination and gate oxide formation Field oxide termination and gate oxide formation

1991-05-17

1993-02-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437983, 437239, 257347, H01L 21265

Patent

active

051871130

ABSTRACT:
A method of treating the sidewalls of a transistor site aperture to form a gate insulator and increase the resistivity of the aperture sidewalls simultaneously combines an initial thin layer of thermal oxide with a thicker layer of pyrogenic oxide and a final layer of thermal oxide.

REFERENCES:
patent: 3696276 (1972-10-01), Boland
patent: 4288470 (1981-09-01), Bate et al.
patent: 4849366 (1989-07-01), Hsu et al.

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