Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2006-05-23
2006-05-23
Tung, Kee M. (Department: 2671)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S230060, C365S230080
Reexamination Certificate
active
07050350
ABSTRACT:
A field memory includes a memory cell array, a first decoder, a second decoder, a sense amplifier circuit, a transfer gate circuit, a write register and a read register. The memory cell array has a field memory for storing data and a line memory for temporarily storing data. The first decoder is coupled to the field memory for selecting a memory cell in the field memory. The second decoder is coupled to the line memory for selecting a memory cell in the line memory. The sense amplifier circuit is coupled to the, memory cell array. The transfer gate circuit is coupled to the sense amplifier circuit. The write register is coupled to the transfer gate circuit for temporarily storing data to be written in the memory cell array. The first read register is coupled to the transfer gate circuit for temporarily storing data read from the memory cell array.
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Oki Electric Industry Co. Ltd.
Tung Kee M.
Volentine Francos & Whitt PLLC
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