Field isolated integrated injection logic gate

Details Field isolated integrated injection logic gate Field isolated integrated injection logic gate

1998-12-30

2000-10-31

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257575, 257576, 438342, 438370, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

061406945

ABSTRACT:
An integrated injection logic device is provided in which each collector of an I2L gate is isolated by a field oxide ("FOX"), or by other suitable isolation such as, for example, an isolation trench. The connection of the base to the collectors, between the base contact region and the bottom of the collectors, is made underneath the field oxide using a buried p type layer (TN3 in the Figures illustrating the invention). Because both silicide and heavy implant p+ implant is present at the base contact point only, the recombination current is reduced. This reduces the current loss when compared to the current loss of the known device. Additionally, current gain is also improved by placing a deep base implant close to the emitter of the upside down NPN transistor in the integrated logic device. The area of the base and the area of the collectors is decoupled, i.e. one can adjust the base to collector areas and the base contact area, independently to control the total base current, thus allowing more freedom in layout optimization of the I2L gate and allowing more freedom in optimizing the gain of the I2L gate.

REFERENCES:
patent: 4433471 (1984-02-01), Ko et al.
patent: 4757027 (1988-07-01), Vora
patent: 4860086 (1989-08-01), Nakamura et al.
patent: 4947230 (1990-08-01), Kapoor
patent: 6008524 (1999-12-01), Gomi

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