Field inversion control for N-channel device integrated circuits

Details Field inversion control for N-channel device integrated circuits Field inversion control for N-channel device integrated circuits

1975-09-15

1977-03-08

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, H01L 21265

Patent

active

040111059

ABSTRACT:
The field inversion properties of integrated circuits incorporating N-channel MOS devices are improved by using a silicon substrate whose bulk dopant concentration is low, but whose local dopant concentration is high at the field surfaces under the field oxide separating the active surface areas where the individual N-channel MOS devices are formed. The differential doping between surface areas under the field oxide and the active surface areas of the substrate is done by nonselectively ion-implanting boron into the substrate to form a uniform low resistivity layer, removing selected portions of the low resistivity layer to expose the unimplanted, high resistivity substrate and forming the active devices at the unimplanted substrate portions. As an option, the unimplanted surface portion can be doped to an intermediate dopant concentration to improve performance. The remaining pattern of the low resistivity layer is covered with field oxide. The invention allows the use of relatively inexpensive, low dopant concentration substrates to conveniently manufacture high performance N-channel MOS integrated circuits.

REFERENCES:
patent: 3472712 (1969-10-01), Bower
patent: 3650019 (1972-03-01), Robinson
patent: 3775191 (1973-11-01), McQuhae
patent: 3891468 (1975-06-01), Ito et al.
patent: 3898105 (1975-08-01), Mai et al.
Duffy, et al., "Impurity Profile Control During Ion Implantation", IBM Tech. Discl. Bull., vol. 12, No. 1, June 1969.
Cho, "Buried Collector Process--etc., " Abstr. No. 137, extended abstracts, vol. 75-1, Spring Meeting, Electrochem. Soc., May 11-16, 1975, pp. 325, 326.

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