Field implant process for CMOS using germanium

Details Field implant process for CMOS using germanium Field implant process for CMOS using germanium

1987-06-19

1988-03-01

Roy, Upendra

Fishing, trapping, and vermin destroying

357 42, 357 91, 437 29, 437 44, 437 56, 437 70, H01L 21263, H01L 2122

Patent

active

047286199

ABSTRACT:
A complementary metal-oxide-semiconductor (CMOS) isolation structure where the field isolation structure between the adjacent areas of different conductivity types has a channel stop doped with boron or phosphorus affected by germanium. The dual use of germanium and a second dopant selected from the group of phosphorus and boron provides a more precisely placed channel stop, since the germanium retards the diffusion of the boron and phosphorus and surprisingly provides improved width effect for the devices in the well where the channel stop is employed. Alternatively, the germanium may be placed in such a manner as to avoid retarding absorption of boron or phosphorus into the field oxide and retard its diffusion over the well of a different conductivity type where it is not desired.

REFERENCES:
patent: 4098618 (1978-07-01), Crowder et al.
patent: 4277299 (1981-07-01), Cerofouni et al.
patent: 4435895 (1984-03-01), Parrillo et al.
patent: 4459741 (1984-07-01), Schwabe et al.
patent: 4466171 (1984-08-01), Jochems
patent: 4562638 (1986-01-01), Schwabe et al.

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