Field implant for semiconductor device

Details Field implant for semiconductor device Field implant for semiconductor device

1996-08-06

1998-08-04

Dang, Trung

Fishing, trapping, and vermin destroying

437 69, 437 27, H01L 2176

Patent

active

057892695

ABSTRACT:
The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.

REFERENCES:
patent: 3936858 (1976-02-01), Seeds et al.
patent: 4829019 (1989-05-01), Mitchell et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 4965221 (1990-10-01), Dennison et al.
patent: 5151381 (1992-09-01), Liu et al.
patent: 5192707 (1993-03-01), Hodges et al.
patent: 5422297 (1995-06-01), Yamauchi
Wolf, Silicon Processing for the VLSI Era--vol. II--Process Integration, Littice Press, 1990, pp. 22-23, Sections 2.2.2.4 and 2.2.2.5.
Rung et al., A Retrograde p-Well for Higher Density CMOS, IEEE Transactions on Electron Devices, vol. ED-28, No. 10, Oct., 1981, pp. 1115-1119.

Affiliated with

Also associated with

Rating

Field implant for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field implant for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field implant for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176376