Field-enhanced diffusion using optical activation

Details Field-enhanced diffusion using optical activation Field-enhanced diffusion using optical activation

1994-09-27

1997-01-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437160, 437171, 437173, H01L 21225

Patent

active

055977626

ABSTRACT:
A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.

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G. Popovici et al., "Diffusion of Impurities Under Bias in CVD Diamond Films," Carter et al. (eds.), Diamond, SiC and Nitride Wide Bandgap Semiconductors, Materials Research Society Symposium Proceedings 339:601-606, Apr. 1994.

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