Field emmitters of wide-bandgap materials

Details Field emmitters of wide-bandgap materials Field emmitters of wide-bandgap materials

1998-02-02

1999-11-23

Day, Michael

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

313336, 313351, 313310, 257 10, H01J 130, H01J 1924

Patent

active

059906049

ABSTRACT:
Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.

REFERENCES:
patent: 3678325 (1972-07-01), Nishida et al.
patent: 5245248 (1993-09-01), Chan et al.
Bernhole, J. et al., "Theory of native defects, doping and diffusion in diamond and silicon carbide," Materials Science and Engineering, 1992 (no month) pp. 265-272.
Koba, R. "Electronical Photonic Applications of Diamond," Plasma and Laser Processing of Materials, The Minerals, Metals & Materials Society pp. 81-90, 1991 (no month).
Greis M.W. et al., "Capacitance-Voltage Measurements on Metal -S1 O.sub.2 -Diamond Structures Fabricated with (100) -and (111) -Oriented Substrates," IEEE Transactions on Eletronic Devices, vol. 38, No. 3, pp. 619-626, Mar. 1991.

Affiliated with

Also associated with

Rating

Field emmitters of wide-bandgap materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field emmitters of wide-bandgap materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field emmitters of wide-bandgap materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1225251